Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements
Date
2002-01-01
Authors
Kerr, Mark J.
Cuevas, Andres
Sinton, Ronald A.
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American Institute of Physics (AIP)
Abstract
The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Vocmeasurements(QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivitysilicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.
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Keywords: Device characteristics; High resistivity silicon devices; Minority carrier lifetimes; Photoconductance; Quasi-steady state; Transient decay; Transient techniques; Varying lights; Open circuit voltage; Slow light; Current voltage characteristics
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Journal of Applied Physics
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Journal article
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