Depth profiling of ion-implanted samples by high-energy electron scattering

Date

2020

Authors

Trombini, Henrique
Vos, Maarten
Elliman, Rob
Grande, P L

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Physics Publishing

Abstract

For heavy ions implanted in low-Z targets it is possible to determine the depth and concentration of introduced heavy impurities by studying the energy spectra of electrons scattered from the surface. Here, we demonstrate this for the case of 30 and 300 keV Au implantation in SiO2. For high-energy incoming electrons the elastic peak splits up in different components as the recoil losses depends on the mass of the scattering atom. Heavy impurities also affect the partial intensities and hence changes in the shape of the energy loss spectra are observed. These effects are reproduced by a simple model that uses sample composition, atomic elastic scattering cross sections and target dielectric function as input.

Description

Keywords

reflection electron energy loss spectroscopy, ion implantation, depth profiling

Citation

Source

Journal of Physics D: Applied Physics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1088/1361-6463/ab66d8

Restricted until

2099-12-31