Temperature dependence of Auger recombination in highly injected crystalline silicon

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dc.contributor.authorWang, Sisi
dc.contributor.authorMacdonald, Daniel
dc.date.accessioned2015-09-21T01:18:04Z
dc.date.available2015-09-21T01:18:04Z
dc.date.issued2012-12-06
dc.date.updated2016-02-24T08:53:28Z
dc.description.abstractThe Auger lifetime in crystalline silicon has been measured under high injection conditions using an injection- and temperature-dependent photoconductance apparatus, across a temperature range from 243 to 473 K (−30 to 200 °C). The corresponding ambipolar Auger coefficient was found to have a value of 1.6 × 10⁻³⁰ cm⁶/s at 303 K (30 °C) at an injection level of 5 × 10¹⁶ cm¯³. The Auger coefficient was found to decrease between 243 K and 303 K, and then remain approximately constant up to 473 K. An empirical parameterization of the measured ambipolar Auger coefficient is provided.
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15590
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 21/09/15). Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://dx.doi.org/10.1063/1.4768900
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Ambipolar; Auger recombination; Crystalline silicons; High injection; Injection levels; Photoconductance; Temperature dependence; Temperature dependent; Temperature range; Crystalline materials; Silicon; Augers
dc.titleTemperature dependence of Auger recombination in highly injected crystalline silicon
dc.typeJournal article
local.bibliographicCitation.issue11en_AU
local.bibliographicCitation.startpage113708en_AU
local.contributor.affiliationWang, Sisi, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.authoruidu4341943en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor090605en_AU
local.identifier.absseo850504en_AU
local.identifier.ariespublicationf5625xPUB2048en_AU
local.identifier.citationvolume112en_AU
local.identifier.doi10.1063/1.4768900en_AU
local.identifier.scopusID2-s2.0-84871184228
local.identifier.thomsonID000312490700049
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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