Atomistic Mechanisms for the Thermal Relaxation of Au -hyperdoped Si
dc.contributor.author | Yang, Wenjie | |
dc.contributor.author | Hudspeth, Quentin | |
dc.contributor.author | Chow, Philippe K. | |
dc.contributor.author | Warrender, Jeffrey M. | |
dc.contributor.author | Ferdous, N. | |
dc.contributor.author | Ertekin, E. | |
dc.contributor.author | Malladi, G. | |
dc.contributor.author | Akey, Austin J. | |
dc.contributor.author | Aziz, Michael J. | |
dc.contributor.author | Williams, James | |
dc.date.accessioned | 2020-06-19T00:54:07Z | |
dc.date.available | 2020-06-19T00:54:07Z | |
dc.date.issued | 2019 | |
dc.date.updated | 2020-01-19T07:27:21Z | |
dc.description.abstract | Au-hyperdoped Si produced by ion implantation and pulsed laser melting exhibits sub-band-gap absorption in the near infrared, a property that is interesting for Si photonics. However, the sub-band-gap absorption has previously been shown to be thermally metastable. In this work, we study the atomistic processes that occur during the thermal relaxation of Au-hyperdoped Si. We show that the first step in thermal relaxation is the release of substitutional Au from lattice sites. This process is characterized by an activation energy of around 1.6 eV, a value similar to that associated with Au diffusion in Si, suggesting that both processes could be rate limited by the exchange of substitutional and interstitial Au atoms. As the system further relaxes, Au is found to locally diffuse and become trapped at nearby lattice defects, notably vacancies and vacancy complexes. In fact, density-functional theory results suggest that the formation of Au dimers is energetically favourable after the Au becomes locally trapped. The dimers could subsequently evolve into trimers, etc., as other diffusing Au atoms become trapped at the dimer. At low Au concentrations, this clustering process does not form visible precipitation after annealing at 750 ◦C for 3 min. In contrast, spherical Au precipitates are found in samples with higher Au concentrations (>0.14 at. %), where the Au atoms and the associated lattice defect distributions are laterally inhomogeneous. | en_AU |
dc.description.sponsorship | Funding from the U.S. Army under Contract No. FA5209-16-P-0104 is acknowledged for partial support of this work. This work was performed in part at the Center for Nanoscale Systems (CNS), a member of the National Nanotechnology Coordinated Infrastructure Network (NNCI), which is supported by the National Science Foundation under NSF Grant No. 1541959. CNS is part of Harvard University. | en_AU |
dc.format.mimetype | application/pdf | en_AU |
dc.identifier.issn | 2331-7019 | en_AU |
dc.identifier.uri | http://hdl.handle.net/1885/205328 | |
dc.language.iso | en_AU | en_AU |
dc.provenance | http://sherpa.ac.uk/romeo/issn/2331-7019/..."author can archive publisher's version/PDF" from SHERPA/RoMEO site (as at 19/06/2020). | en_AU |
dc.publisher | American Physical Society | en_AU |
dc.rights | © 2019 American Physical Society | en_AU |
dc.source | Physical Review Applied | en_AU |
dc.title | Atomistic Mechanisms for the Thermal Relaxation of Au -hyperdoped Si | en_AU |
dc.type | Journal article | en_AU |
dcterms.accessRights | Open Access | en_AU |
local.bibliographicCitation.issue | 2 | en_AU |
local.bibliographicCitation.lastpage | 024015-8 | en_AU |
local.bibliographicCitation.startpage | 024015-1 | en_AU |
local.contributor.affiliation | Yang, Wenjie, College of Science, ANU | en_AU |
local.contributor.affiliation | Hudspeth, Quentin, U.S. Army | en_AU |
local.contributor.affiliation | Chow, Philippe K., U.S. Army | en_AU |
local.contributor.affiliation | Warrender, Jeffrey M., US Army | en_AU |
local.contributor.affiliation | Ferdous, N., University of Illinois Urbana-Champaign | en_AU |
local.contributor.affiliation | Ertekin, E., University of Illinois Urbana-Champaign | en_AU |
local.contributor.affiliation | Malladi, G., SUNY College of Nanoscale Science and Engineering | en_AU |
local.contributor.affiliation | Akey, Austin J. , Harvard School of Engineering and Applied Science | en_AU |
local.contributor.affiliation | Aziz, Michael J., Harvard John A. Paulson School of Engineering and Applied Sciences | en_AU |
local.contributor.affiliation | Williams, James, College of Science, ANU | en_AU |
local.contributor.authoremail | u8809701@anu.edu.au | en_AU |
local.contributor.authoruid | Yang, Wenjie, u5510882 | en_AU |
local.contributor.authoruid | Williams, James, u8809701 | en_AU |
local.description.notes | Imported from ARIES | en_AU |
local.identifier.absfor | 020406 - Surfaces and Structural Properties of Condensed Matter | en_AU |
local.identifier.absfor | 091204 - Elemental Semiconductors | en_AU |
local.identifier.absseo | 810104 - Emerging Defence Technologies | en_AU |
local.identifier.absseo | 861799 - Communication Equipment not elsewhere classified | en_AU |
local.identifier.absseo | 970102 - Expanding Knowledge in the Physical Sciences | en_AU |
local.identifier.ariespublication | u3102795xPUB4255 | en_AU |
local.identifier.citationvolume | 12 | en_AU |
local.identifier.doi | 10.1103/PhysRevApplied.12.024015 | en_AU |
local.identifier.scopusID | 2-s2.0-85070539879 | |
local.identifier.uidSubmittedBy | u3102795 | en_AU |
local.publisher.url | https://www.aps.org/ | en_AU |
local.type.status | Published Version | en_AU |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- 01_Yang_Atomistic_Mechanisms_for_the_2019.pdf
- Size:
- 1.16 MB
- Format:
- Adobe Portable Document Format