Admittance spectroscopy of GeSi-based quantum dot systems: Experiment and Theory

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dc.contributor.authorLi, Xi
dc.contributor.authorXu, Wen
dc.contributor.authorCao, Shihai
dc.contributor.authorCai, Qijia
dc.contributor.authorLu, Fang
dc.date.accessioned2015-12-07T22:31:17Z
dc.date.issued2007
dc.date.updated2015-12-07T10:15:05Z
dc.description.abstractA combined experimental and theoretical study is carried out in examining the important features of the admittance spectroscopy (AS) of self-assembled GeSi quantum dot (QD) systems. In the experimental component of the study, we measure the dependence of
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/1885/22711
dc.publisherAmerican Physical Society
dc.sourcePhysical Review B: Condensed Matter and Materials
dc.titleAdmittance spectroscopy of GeSi-based quantum dot systems: Experiment and Theory
dc.typeJournal article
local.bibliographicCitation.issue24
local.bibliographicCitation.lastpage9
local.bibliographicCitation.startpage1
local.contributor.affiliationLi, Xi, Fudan University
local.contributor.affiliationXu, Wen, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationCao, Shihai, Fudan University
local.contributor.affiliationCai, Qijia, Fudan University
local.contributor.affiliationLu, Fang, Fudan University
local.contributor.authoruidXu, Wen, u4044347
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020404 - Electronic and Magnetic Properties of Condensed Matter; Superconductivity
local.identifier.ariespublicationu4039210xPUB23
local.identifier.citationvolume76
local.identifier.doi10.1103/PhysRevB.76.245304
local.identifier.scopusID2-s2.0-36849058075
local.type.statusPublished Version

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