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Supercontinuum generation in As2S3 waveguides fabricated without direct etching

dc.contributor.authorHwang, Joonhyuk
dc.contributor.authorKim, Dae-Gon
dc.contributor.authorHan, Sangyoon
dc.contributor.authorJeong, Dongin
dc.contributor.authorLee, Yong Hee
dc.contributor.authorChoi, Duk-Yong
dc.contributor.authorLee, Hansuek
dc.date.accessioned2023-02-26T22:23:55Z
dc.date.issued2021
dc.date.updated2021-12-19T07:17:02Z
dc.description.abstractWe report a supercontinuum generation (SCG) in a waveguide that spontaneously forms without an etching process during the deposition of a core material on a preformed SiO substructure. The mechanism of dispersion control for this new, to the best of our knowledge, type of waveguide is analyzed by numerical simulation, which results in a design rule to achieve a target dispersion profile by adjusting the substructure geometry. SCG is experimentally demonstrated with a waveguide made of As S , chalcogenide glass, which has low material absorption over the mid-IR range. A dispersion-controlled waveguide with a length of 10 mm pumped with 77 pJ pulses at a telecommunication wavelength of 1560 nm resulted in a supercontinuum that extends by more than 1.5 octaves. 2 2 3en_AU
dc.description.sponsorshipNational Research Foundation of Korea (2020R1A2C1008292, 2020R1A4A2002828); Samsung Research Funding & Incubation Center of Samsung Electronics (SRFC-IT1801-03)en_AU
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.issn0146-9592en_AU
dc.identifier.urihttp://hdl.handle.net/1885/286418
dc.language.isoen_AUen_AU
dc.publisherOptical Society of Americaen_AU
dc.rights© 2021 The authorsen_AU
dc.sourceOptics Lettersen_AU
dc.titleSupercontinuum generation in As2S3 waveguides fabricated without direct etchingen_AU
dc.typeJournal articleen_AU
local.bibliographicCitation.issue10en_AU
local.bibliographicCitation.lastpage2416en_AU
local.bibliographicCitation.startpage2413en_AU
local.contributor.affiliationHwang, Joonhyuk, Korea Advanced Institute of Science and Technologyen_AU
local.contributor.affiliationKim, Dae-Gon, Korea Advanced Institute of Science and Technologyen_AU
local.contributor.affiliationHan, Sangyoon, Korea Advanced Institute of Science and Technologyen_AU
local.contributor.affiliationJeong, Dongin, Korea Advanced Institute of Science and Technologyen_AU
local.contributor.affiliationLee, Yong Hee, Korea Advanced Institute of Science and Technologyen_AU
local.contributor.affiliationChoi, Duk, College of Science, ANUen_AU
local.contributor.affiliationLee, Hansuek, Korea Advanced Institute of Science and Technologyen_AU
local.contributor.authoruidChoi, Duk, u4219275en_AU
local.description.embargo2099-12-31
local.description.notesImported from ARIESen_AU
local.identifier.absfor401600 - Materials engineeringen_AU
local.identifier.absfor510200 - Atomic, molecular and optical physicsen_AU
local.identifier.ariespublicationa383154xPUB19240en_AU
local.identifier.citationvolume46en_AU
local.identifier.doi10.1364/OL.422606en_AU
local.identifier.scopusID2-s2.0-85105554070
local.publisher.urlhttps://opg.optica.org/en_AU
local.type.statusPublished Versionen_AU

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