Comparison of InAs Quantum Dots Grown on GaInAsP and InP

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dc.contributor.authorBarik, Satyanarayanen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-13T23:03:43Z
dc.date.issued2006
dc.date.updated2015-12-12T07:50:51Z
dc.description.abstractWe report on the growth of InAs quantum dots (QDs) on GaInAsP and InP buffers by metal-organic chemical vapour deposition on InP(100) substrates. Indium segregation and the As-P exchange reaction affect the QD nucleation and composition. The As-P exchange reaction has a more pronounced effect on the QDs grown on the InP buffer than on those grown on the GaInAsP buffer. A very thin (0.6 nm) GaAs interlayer grown between the buffer layer and the InAs QD layer consumes segregated indium and minimizes the As/P exchange reaction. Wavelength tuning from 1450 to 1750 nm covering the technologically important 1550 nm wavelength is also achieved for the InAs QDs grown with the thin GaAs interlayer.
dc.identifier.issn0957-4484
dc.identifier.urihttp://hdl.handle.net/1885/85052
dc.publisherInstitute of Physics Publishing
dc.sourceNanotechnology
dc.subjectKeywords: Indium compounds; Metallorganic chemical vapor deposition; Nucleation; Semiconducting gallium arsenide; Thin films; Exchange reaction; GaInAsP buffer; Wavelength tuning; Semiconductor quantum dots
dc.titleComparison of InAs Quantum Dots Grown on GaInAsP and InP
dc.typeJournal article
local.bibliographicCitation.lastpage1870
local.bibliographicCitation.startpage1867
local.contributor.affiliationBarik, Satyanarayan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoremailu9302338@anu.edu.au
local.contributor.authoruidBarik, Satyanarayan, u2507109
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020501 - Classical and Physical Optics
local.identifier.absfor091299 - Materials Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub13252
local.identifier.citationvolume17
local.identifier.doi10.1088/0957-4484/17/8/010
local.identifier.scopusID2-s2.0-33645318480
local.identifier.uidSubmittedByMigrated
local.type.statusPublished Version

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