Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
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Astromskas, Gvidas
Storm, Kristian
Caroff, Philippe
Borgström, Magnus
Lind, Erik
Wernersson, Lars-Erik
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Elsevier
Abstract
InAs/HfO2 nanowire capacitors using capacitance-voltage (CV) measurements are investigated in the range of 10 kHz to 10 MHz. The capacitors are based on vertical nanowire arrays that are coated with an 8 nm-thick HfO2 layer by atomic layer deposition. CV
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Microelectronic Engineering
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2037-12-31
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