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Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method

Date

Authors

Astromskas, Gvidas

Storm, Kristian

Caroff, Philippe

Borgström, Magnus

Lind, Erik

Wernersson, Lars-Erik

Publisher

Elsevier

Abstract

InAs/HfO2 nanowire capacitors using capacitance-voltage (CV) measurements are investigated in the range of 10 kHz to 10 MHz. The capacitors are based on vertical nanowire arrays that are coated with an 8 nm-thick HfO2 layer by atomic layer deposition. CV

Keywords

Keywords: Border traps; C-V characteristic; Capacitance voltage; Capacitance-voltage method; Dopant precursors; Doped sample; Doping levels; Frequency characterization; Frequency dispersion; III/V; InAs; n-Type doping; Nanowire arrays; Nanowire surface; Temperature Capacitance-voltage; III/V; InAs; Nanowire doping; Vertical wrap gate

URI

http://hdl.handle.net/1885/84516

Collections

ANU Research Publications

Source

Microelectronic Engineering

Type

Journal article

DOI

10.1016/j.mee.2010.08.010

Restricted until

2037-12-31

Downloads

File

Description

01_Astromskas_Temperature_and_frequency_2011.pdf (314.22 KB)

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