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Controlled lateral growth of silica nanowire

Date

Authors

Kim, Tae-Hyun

Shalav, Avi

Elliman, Robert

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

This study investigates the controlled lateral growth of amorphous silica nanowires using the Si active oxidation as the dominant SiO vapour precursor for nanowire growth. The development of complex multi-layered core shell nanowire structures using a combination of both active Si oxidation and secondary coating techniques is also demonstrated.

Keywords

Keywords: Amorphous silica; Lateral growth; Multi-layered; Nanowire growth; Si oxidation; Silica nano wires; Amorphous silicon; Microelectronics; Oxidation; Silica; Nanowires

URI

http://hdl.handle.net/1885/51655

Collections

ANU Research Publications

Source

2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

Type

Conference paper

DOI

10.1109/COMMAD.2010.5699779

Restricted until

2037-12-31

Downloads

File

Description

01_Kim_Controlled_lateral_growth_of_2010.pdf (1.24 MB)