Movpe growth and structural characterization of extremely lattice-mismatched InP-InSb nanowire heterostructures
Date
2009
Authors
Borg, B M
Messing, Maria E
Caroff, Philippe
Dick, Kimberley A.
Deppert, Knut
Wernersson, Lars-Erik
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
We present a growth study and structural characterization of InP-InSb nanowire heterostructures. In contrast to planar epitaxy, this heterostructure can be realized in nanowires without the formation of dislocations, despite an extreme lattice-mismatch (10.4%). We obtain high crystal quality in the InSb nanowires, confirmed by a narrow 111 reflection peak measured by XRD. Additionally, the diameter dependence of the nanowire growth rate was investigated. An original competition between surface growth and nanowire growth is found, which can be controlled by varying the nanowire surface coverage. Finally, HRTEM and X-EDS investigations reveal that the InSb nanowire is always defect-free zinc-blende, and that the InP-InSb heterointerface is free from misfit dislocations, although single twin planes are common.
Description
Keywords
Keywords: Crystal qualities; Defect-free; Hetero interfaces; Heterostructures; InP; InSb nanowire; Lattice-mismatched; Misfit dislocations; MOVPE growth; Nanowire growth; Nanowire surface; Reflection peaks; Structural characterization; Surface growth; Twin planes;
Citation
Collections
Source
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Type
Conference paper
Book Title
Entity type
Access Statement
License Rights
Restricted until
2037-12-31
Downloads
File
Description