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Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers

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dc.contributor.authorRougieux, F. E.
dc.contributor.authorGrant, N. E.
dc.contributor.authorMacdonald, D.
dc.contributor.editorTuran, H.
dc.contributor.editorValenta, R.
dc.coverage.spatialLille, France
dc.date.accessioned2015-05-27T03:05:30Z
dc.date.available2015-05-27T03:05:30Z
dc.date.createdMay 26-30 2014
dc.date.issued2014
dc.date.updated2019-07-14T08:16:14Z
dc.description.abstractIn this study, we investigate the nature of some recombination active defects limiting the lifetime in Czochralski (CZ) silicon wafers, in the millisecond range. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use lifetime spectroscopy combine with several annealing steps to help identify the defect. We demonstrate that the defect can be deactivated by annealing above 300°C. Our experimental findings suggest that vacancy-related pairs incorporated during ingot growth may be responsible for the decreased minority carrier lifetime.
dc.description.sponsorshipThis work was supported by the Australian Renewable Energy Agency postdoctoral fellowship program (ARENA), and the Australian Research Council future fellowship program (ARC).en_AU
dc.format4 pages
dc.identifier.isbn18766102
dc.identifier.issn1876-6102en_AU
dc.identifier.urihttp://hdl.handle.net/1885/13609
dc.publisherElsevier
dc.relation.ispartofseriesE-MRS Spring Meeting 2014 Symposium Y - Advanced materials and characterization techniques for solar cells II, 2014
dc.rights© 2014 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/).
dc.sourceEnergy Procedia
dc.subjectCzochralski
dc.subjectsilicon
dc.subjectdefect
dc.subjectnitrogen
dc.subjectvacancy
dc.subjectminority carrier lifetime
dc.titleImpact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers
dc.typeJournal article
local.bibliographicCitation.lastpage84en_AU
local.bibliographicCitation.startpage81en_AU
local.contributor.affiliationRougieux, Fiacre E., Research School of Engineering, College of Engineering and Computer Science, The Australian National Universityen_AU
local.contributor.affiliationGrant, N.E., Research School of Engineering, College of Engineering and Computer Science, The Australian National Universityen_AU
local.contributor.affiliationMacdonald, D., Research School of Engineering, College of Engineering and Computer Science, The Australian National Universityen_AU
local.contributor.authoruidu4611760en_AU
local.description.notesThis was a conference paper presented at the E-MRS Spring Meeting 2014 Symposium Y “Advanced materials and characterization techniques for solar cells II”, 26-30 May 2014, Lille, France.en_AU
local.description.refereedYes
local.identifier.absfor090600 - ELECTRICAL AND ELECTRONIC ENGINEERING
local.identifier.absfor210302 - Asian History
local.identifier.absfor210307 - European History (excl. British, Classical Greek and Roman)
local.identifier.ariespublicationa383154xPUB1076
local.identifier.citationvolume60en_AU
local.identifier.doi10.1016/j.egypro.2014.12.346en_AU
local.identifier.scopusID2-s2.0-84922373395
local.identifier.thomsonID000358685500012
local.publisher.urlhttp://www.elsevier.com/en_AU
local.type.statusPublished Versionen_AU

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