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Point defect engineered Si sub-bandgap light-emitting diode

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Date

2007-05-16

Authors

Bao, Jiming
Tabbal, Malek
Kim, Taegon
Charnvanichborikarn, Supakit
Williams, James S
Aziz, Michael
Capasso, Federico

Journal Title

Journal ISSN

Volume Title

Publisher

Optical Society of America

Abstract

We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line at 1218 nm originates.

Description

Keywords

light-emitting diodes, semiconductors, optoelectronics

Citation

Optics Express 15.11 (2007): 6727-6733

URI

http://hdl.handle.net/10440/440
 http://digitalcollections.anu.edu.au/handle/10440/440

Collections

ANU Research Publications

Source

Optics Express

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1364/OE.15.006727

Restricted until

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Bao_Point2007.pdf (103.08 KB)

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