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Irradiation Induced Defects in Nanocrystalline Cu

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dc.contributor.authorJohannessen, Bernt
dc.contributor.authorKluth, Patrick
dc.contributor.authorGlover, Christopher
dc.contributor.authorForan, Garry J
dc.contributor.authorRidgway, Mark C
dc.date.accessioned2015-12-13T22:52:25Z
dc.date.issued2005
dc.date.updated2015-12-11T10:51:02Z
dc.description.abstractCu nanocrystals were synthesized in a thin layer of amorphous silica (SiO2) by ion implantation and thermal annealing. Subsequently the nanocrystals and a bulk Cu film standard were irradiated with high-energy Sn ions to induce structural disorder. We quantify the disorder by extended X-ray absorption fine structure (EXAFS) spectroscopy. Irradiation is found to increase the structural disorder in the nanocrystals, while the structural parameters of the irradiated film remain the same as those for the unirradiated crystalline standard. We explain this difference by the high regeneration rate in elemental bulk metals and the effect thereupon of a finite crystal size.
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/81566
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Amorphous silicon; Annealing; Copper; Crystalline materials; Ion implantation; Irradiation; Metallic films; Radiation effects; Silica; X ray spectroscopy; Crystal size; EXAFS; High-energy ions; Nanocrystals; Nanostructured materials EXAFS; Ion implantation; Nanocrystals
dc.titleIrradiation Induced Defects in Nanocrystalline Cu
dc.typeJournal article
local.bibliographicCitation.lastpage280
local.bibliographicCitation.startpage276
local.contributor.affiliationJohannessen, Bernt, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKluth, Patrick, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGlover, Christopher, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationForan, Garry J, Australian Nuclear Science and Technology Organisation
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidJohannessen, Bernt, u3985823
local.contributor.authoruidKluth, Patrick, u4054452
local.contributor.authoruidGlover, Christopher, u3915129
local.contributor.authoruidRidgway, Mark C, u9001886
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub9843
local.identifier.citationvolume238
local.identifier.doi10.1016/j.nimb.2005.06.063
local.identifier.scopusID2-s2.0-25144465511
local.type.statusPublished Version

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