Self-Bias Cutoff Effect in Power Transistors
| dc.contributor.author | Fletcher, Neville H. | |
| dc.date.accessioned | 2020-11-03T04:07:37Z | |
| dc.date.issued | 1955 | |
| dc.format.mimetype | application/pdf | en_AU |
| dc.identifier.issn | 0096-8390 | en_AU |
| dc.identifier.uri | http://hdl.handle.net/1885/213300 | |
| dc.language.iso | en_AU | en_AU |
| dc.publisher | IEEE | en_AU |
| dc.rights | © IEEE | en_AU |
| dc.source | Proceedings of the IRE: Correspondence | en_AU |
| dc.title | Self-Bias Cutoff Effect in Power Transistors | en_AU |
| dc.type | Journal article | en_AU |
| local.bibliographicCitation.lastpage | 1669 | en_AU |
| local.bibliographicCitation.startpage | 1669 | en_AU |
| local.contributor.affiliation | Fletcher, N. H., Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.authoruid | u1849746 | en_AU |
| local.description.embargo | 2037-12-31 | |
| local.description.notes | The author was affiliated with University of New England when the paper was published | en_AU |
| local.identifier.doi | 10.1109/JRPROC.1955.277995 | |
| local.publisher.url | https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=5 | en_AU |
| local.type.status | Published Version | en_AU |
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