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Self-Bias Cutoff Effect in Power Transistors

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dc.contributor.authorFletcher, Neville H.
dc.date.accessioned2020-11-03T04:07:37Z
dc.date.issued1955
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.issn0096-8390en_AU
dc.identifier.urihttp://hdl.handle.net/1885/213300
dc.language.isoen_AUen_AU
dc.publisherIEEEen_AU
dc.rights© IEEEen_AU
dc.sourceProceedings of the IRE: Correspondenceen_AU
dc.titleSelf-Bias Cutoff Effect in Power Transistorsen_AU
dc.typeJournal articleen_AU
local.bibliographicCitation.lastpage1669en_AU
local.bibliographicCitation.startpage1669en_AU
local.contributor.affiliationFletcher, N. H., Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidu1849746en_AU
local.description.embargo2037-12-31
local.description.notesThe author was affiliated with University of New England when the paper was publisheden_AU
local.identifier.doi10.1109/JRPROC.1955.277995
local.publisher.urlhttps://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=5en_AU
local.type.statusPublished Versionen_AU

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