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Realization of rectifying and resistive switching behaviors of TiO2 nanorod arrays for nonvolatile memory

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dc.contributor.authorZhang, Feng
dc.contributor.authorGan, Xiaoyan
dc.contributor.authorLi, Xiaomin
dc.contributor.authorWu, Liang
dc.contributor.authorGao, Xiangdong
dc.contributor.authorZheng, Renkui
dc.contributor.authorHe, Yong
dc.contributor.authorLiu, Xinjun
dc.contributor.authorYang, Rui
dc.date.accessioned2015-12-10T23:18:16Z
dc.date.issued2011
dc.date.updated2016-02-24T09:57:14Z
dc.description.abstractBoth the rectifying and resistive switching behaviors are reported in single-crystalline TiO2 nanorod arrays (NRAs). The transition from rectifying to bipolar resistive switching behavior can be controlled by a forming process. The surface of TiO2 nanorods and the Pt/TiO2 NRAs interface play crucial roles on resistive switching. In low resistance state, the dependence of resistance on cell area indicates that filaments form on each individual nanorod, which contributes to the narrow distribution of resistive switching parameters. These results suggest that single-crystalline TiO2 NRAs could be used as nanowire-based switch element and memory cell for next-generation nonvolatile memory.
dc.identifier.issn1099-0062
dc.identifier.urihttp://hdl.handle.net/1885/65550
dc.publisherElectrochemical Society Inc
dc.sourceElectrochemical and Solid-State Letters
dc.subjectKeywords: Forming process; Low-resistance state; Memory cell; Nanorod arrays; Narrow distribution; Non-volatile memories; Resistive switching; Resistive switching behaviors; Single-crystalline; Switch element; TiO; Crystalline materials; Distillation; Nanowires; Sw
dc.titleRealization of rectifying and resistive switching behaviors of TiO2 nanorod arrays for nonvolatile memory
dc.typeJournal article
local.bibliographicCitation.issue10
local.bibliographicCitation.lastpageH425
local.bibliographicCitation.startpageH422
local.contributor.affiliationZhang, Feng, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationGan, Xiaoyan, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationLi, Xiaomin, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationWu, Liang, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationGao, Xiangdong, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationZheng, Renkui, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationHe, Yong, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationYang, Rui, National Institute for Materials Science
local.contributor.authoruidLiu, Xinjun, u5361480
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor100604 - Memory Structures
local.identifier.absfor100705 - Nanoelectronics
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.absseo970110 - Expanding Knowledge in Technology
local.identifier.ariespublicationU3488905xPUB1122
local.identifier.citationvolume14
local.identifier.doi10.1149/1.3617442
local.identifier.scopusID2-s2.0-80051646234
local.type.statusPublished Version

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