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Single deep ultraviolet light emission from boron nitride nanotube film

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dc.contributor.authorLi, Lu Hua
dc.contributor.authorChen, Ying
dc.contributor.authorLin, Meng-Yeh
dc.contributor.authorGlushenkov, Alexey M.
dc.contributor.authorCheng, Bing-Ming
dc.contributor.authorYu, Jun
dc.date.accessioned2015-09-17T00:31:23Z
dc.date.available2015-09-17T00:31:23Z
dc.date.issued2010-10-04
dc.date.updated2015-12-10T09:27:05Z
dc.description.abstractLight in deep ultraviolet DUV region has a wide range of applications and the demand for finding DUV light emitting materials at nanoscale is increasingly urgent as they are vital for building miniaturized optic and optoelectronic devices. We discover that boron nitride nanotubes BNNTs with a well-crystallized cylindrical multiwall structure and diameters smaller than 10 nm can have single DUV emission at 225 nm 5.51 eV. The measured BNNTs are grown on substrate in the form of a thin film. This study suggests that BNNTs may work as nanosized DUV light sources for various applications. © 201
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15491
dc.publisherAmerican Institute of Physics
dc.rightsPublishers version/PDF may be used on author's personal website, institutional website or institutional repository http://www.sherpa.ac.uk/romeo/issn/0003-6951 Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at 10.1063/1.3497261
dc.sourceApplied Physics Letters
dc.subjectultraviolet light emission
dc.subjectboron nitride nanotube film
dc.titleSingle deep ultraviolet light emission from boron nitride nanotube film
dc.typeJournal article
local.bibliographicCitation.issue14en_AU
local.bibliographicCitation.startpage141104en_AU
local.contributor.affiliationLi, Lu Hua, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationChen, Ying, Deakin University, Australiaen_AU
local.contributor.affiliationLin, Meng-Yeh, National Synchrotron Radiation Research Center, Taiwanen_AU
local.contributor.affiliationGlushenkov, Alexey M, Deakin University, Australiaen_AU
local.contributor.affiliationCheng, Bing-Ming, National Synchrotron Radiation Research Center, Taiwanen_AU
local.contributor.affiliationYu, Jun X, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidLi, Lu Hua, u4166979en_AU
local.contributor.authoruidYu, Jun X, u4017226en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor030306en_AU
local.identifier.ariespublicationf2965xPUB872en_AU
local.identifier.citationvolume97en_AU
local.identifier.doi10.1063/1.3497261en_AU
local.identifier.scopusID2-s2.0-77958029714
local.type.statusPublished Versionen_AU

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