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Multivalley engineering in semiconductor microcavities

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dc.contributor.authorSun, M.
dc.contributor.authorSavenko, Ivan
dc.contributor.authorFlayac, H.
dc.contributor.authorLiew, T. C. H.
dc.date.accessioned2021-06-09T04:30:31Z
dc.date.available2021-06-09T04:30:31Z
dc.date.issued2017-04-03
dc.date.updated2020-11-23T10:51:32Z
dc.description.abstractWe consider exciton-photon coupling in semiconductor microcavities in which separate periodic potentials have been embedded for excitons and photons. We show theoretically that this system supports degenerate ground-states appearing at non-zero inplane momenta, corresponding to multiple valleys in reciprocal space, which are further separated in polarization corresponding to a polarization-valley coupling in the system. Aside forming a basis for valleytronics, the multivalley dispersion is predicted to allow for spontaneous momentum symmetry breaking and two-mode squeezing under non-resonant and resonant excitation, respectivelyen_AU
dc.description.sponsorshipWe acknowledge support of Project Code (IBS-R024-D1); the Australian Research Council's Discovery Projects funding scheme (project DE160100167), the government of Russian Federation (project MK-5903.2016.2) and the Dynasty Foundation. TCHL was supported by the MOE AcRF Tier 1 grant 2016-T1-1-084 and MOE AcRF Tier 2 grant 2015-T2-1-055.en_AU
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.citationSun, M. et al. Multivalley engineering in semiconductor microcavities. Sci. Rep. 7, 45243; doi: 10.1038/srep45243 (2017).en_AU
dc.identifier.issn2045-2322en_AU
dc.identifier.urihttp://hdl.handle.net/1885/236911
dc.language.isoen_AUen_AU
dc.provenanceThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en_AU
dc.publisherNature Publishing Groupen_AU
dc.relationhttp://purl.org/au-research/grants/arc/DE160100167en_AU
dc.rights© 2017 The Author(s)en_AU
dc.rights.licenseCreative Commons Attribution 4.0 International Licenseen_AU
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_AU
dc.sourceScientific Reportsen_AU
dc.titleMultivalley engineering in semiconductor microcavitiesen_AU
dc.typeJournal articleen_AU
dcterms.accessRightsOpen Accessen_AU
dcterms.dateAccepted2017-02-20
local.bibliographicCitation.lastpage7en_AU
local.bibliographicCitation.startpage1en_AU
local.contributor.affiliationSun, M., Institute for Basic Scienceen_AU
local.contributor.affiliationSavenko, Ivan, College of Science, ANUen_AU
local.contributor.affiliationFlayac, H., Ecole Polytechnique Fédérale de Lausanneen_AU
local.contributor.affiliationLiew, T. C. H., Nanyang Technological Universityen_AU
local.contributor.authoruidSavenko, Ivan, u5271135en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020501 - Classical and Physical Opticsen_AU
local.identifier.ariespublicationa383154xPUB5695en_AU
local.identifier.citationvolume7en_AU
local.identifier.doi10.1038/srep45243en_AU
local.identifier.scopusID2-s2.0-85016937847
local.identifier.thomsonID000398106100001
local.publisher.urlhttps://www.nature.com/en_AU
local.type.statusPublished Versionen_AU

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