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Planarization of InP pyramids containing integrated InAs quantum dots and their optical properties

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dc.contributor.authorWang, Hao
dc.contributor.authorYuan, Jiayue
dc.contributor.authorvan Veldhoven, Rene P J
dc.contributor.authorde Vries, Tjibbe
dc.contributor.authorSmalbrugge, Barry
dc.contributor.authorGeluk, Erik Jan
dc.contributor.authorNötzel, Richard
dc.date.accessioned2015-11-19T03:39:41Z
dc.date.available2015-11-19T03:39:41Z
dc.date.issued2010-11-19
dc.description.abstractPosition-controlled InAs quantum dots(QDs) are integrated into planar InP structures by employing selective area growth of InP pyramids and regrowth by metalorganic vapor-phase epitaxy. A smooth surface morphology is obtained at elevated regrowth temperature due to suppression of three-dimensional growth on the pyramids. The height differences are less than 30 nm after nominal 700 nm InP regrowth at 640 °C. Most important, the integrated QDs maintain good optical quality after regrowth for the realization of integrated nanophotonic devices and circuits operating at telecom wavelengths.en_AU
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16526
dc.publisherAmerican Institute of Physics (AIP)en_AU
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 19/11/15). Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.3491025en_AU
dc.sourceJournal of Applied Physicsen_AU
dc.titlePlanarization of InP pyramids containing integrated InAs quantum dots and their optical propertiesen_AU
dc.typeJournal articleen_AU
local.bibliographicCitation.issue10en_AU
local.bibliographicCitation.startpage104308en_AU
local.contributor.affiliationWang, Hao, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationYuan, Jiayue, Eindhoven University of Technology, Netherlandsen_AU
local.contributor.affiliationvan Veldhoven, Rene P J, Eindhoven University of Technology, Netherlandsen_AU
local.contributor.affiliationde Vries, Tjibbe, Eindhoven University of Technology, Netherlandsen_AU
local.contributor.affiliationSmalbrugge, E, Eindhoven University of Technology, Netherlandsen_AU
local.contributor.affiliationGeluk, E-J, Eindhoven University of Technology, Netherlandsen_AU
local.contributor.affiliationNotzel, Richard, Eindhoven University of Technology, Netherlandsen_AU
local.contributor.authoruidu4953384en_AU
local.description.notesImported from ARIES. At the time of publication Hao Wang was affiliated with Department of Applied Physics, COBRA Research Institute, Eindhoven University of Technology, The Netherlands.en_AU
local.identifier.absfor020499en_AU
local.identifier.ariespublicationu4153526xPUB91en_AU
local.identifier.citationvolume108en_AU
local.identifier.doi10.1063/1.3491025en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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