Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Improved thermal and electrical properties of Al-doped Ge 2 Sb 2 Te 5 films for phase-change random access memory

Thumbnail Image

Date

2012

Authors

Wang, Guoxiang
Shen, Xiang
Nie, Qiuhua
Wang, Rongping
Wu, Liangcai
Lv, Yegang
Chen, Fen
Fu, Jing
Dai, Shixun
Li, Jun

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Physics Publishing

Abstract

Al x(Ge 2Sb 2Te 5) 100-x materials with different Al contents are systemically studied for applications in phase-change random access memory (PRAM) devices. Al-doped Ge 2Sb 2Te 5 (GST) films show better thermal stability than GST because they do not have

Description

Keywords

Keywords: Al content; Annealing temperatures; Crystalline phasis; Crystallization process; Face-centred cubic; Local bonding; On/off ratio; Orders of magnitude; Phase-change random access memory; Threshold currents; Crystalline materials; Electric properties; Germa

Citation

URI

http://hdl.handle.net/1885/71034

Collections

ANU Research Publications

Source

Journal of Physics D: Applied Physics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1088/0022-3727/45/37/375302

Restricted until

2037-12-31

Downloads

File
Description
01_Wang_Improved_thermal_and_2012.pdf (291.58 KB)

DSpace software copyright © 2002-2026 LYRASIS