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Thin film deposition of Ge33As12 Se55 by pulsed laser deposition and thermal evaporation: comparison of properties

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Date

2007

Authors

Jarvis, Ruth
Wang, Rongping
Rode, Andrei V
Zha, Congji
Luther-Davies, Barry

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

Thin films of Ge33As12Se55 were produced using two deposition techniques, ultra-fast pulsed laser deposition (UFPLD) and thermal evaporation (TE), and their properties have been investigated. The chemical composition of the UFPLD films was virtually identical to the composition of the chalcogenide glass targets, whereas the composition of films deposited by TE was significantly different from the target material. Heating of the substrate with a temperature gradient during deposition produced a gradient in composition in both UFPLD and TE films.

Description

Keywords

Keywords: Arsenic; Chalcogenides; Dielectric properties; Germanium; Pulsed laser deposition; Raman spectroscopy; Selenium; Thermal evaporation; Film composition; Laser deposition; Ultra fast pulsed laser deposition; Thin films Chalcogenides; Composition; Dielectric properties; Ge33As12Se55; Laser deposition; Raman spectroscopy; Thermal evaporation; Thin films

Citation

URI

http://hdl.handle.net/1885/34061

Collections

ANU Research Publications

Source

Journal of Non-crystalline Solids

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.jnoncrysol.2006.12.079

Restricted until

2037-12-31

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