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Activation Energies for Light Ions in Ion Beam Induced Epitaxial Crystallization

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Date

1999

Authors

Kinomura, A
Chayahara, A
Tsubouchi, N
Horino, Y.
Williams, James

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

Activation energies of ion beam induced epitaxial crystallization (IBIEC) of Si have been measured for B, C and O ions at 0.7 or 3 MeV at temperatures 150-400°C. An activation energy for B was measured to be 0.26 eV in the range 250-400°C. This value wa

Description

Keywords

Keywords: Activation energy; Boron; Carbon; Crystal defects; Crystallization; Epitaxial growth; Ion beams; Oxygen; Semiconductor growth; Thermal effects; Ion beam induced epitaxial crystallization (IBIEC); Semiconducting silicon Activation energy; Epitaxy; IBIEC; Light ion

Citation

URI

http://hdl.handle.net/1885/93695

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

Book Title

Entity type

Access Statement

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DOI

Restricted until

2037-12-31

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