Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

High gain single GaAs nanowire photodetector

Simple item page
dc.contributor.authorWang, Hao
dc.date.accessioned2015-10-28T03:27:50Z
dc.date.available2015-10-28T03:27:50Z
dc.date.issued2013-08-26
dc.date.updated2016-02-24T10:16:14Z
dc.description.abstractAn undoped single GaAs nanowire (NW) photodetector based on a metal–semiconductor–metal Schottky diode structure is fabricated by a focused ion beam method. The photoconductive gain of the device reaches 20 000 at low laser excitation. Bias-dependence of gain proves that the surface contributes more to the gain at higher bias because of an increased surface charge region. The spectral response demonstrates not only the band-edge absorption profile of the single GaAs NW, but also the existence of leaky-mode resonance.
dc.description.sponsorshipThe Australian Research Council is acknowledged for its financial support.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16150
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 28/10/15). Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.4816246
dc.sourceApplied Physics Letters
dc.subjectKeywords: Band-edge absorption; GaAs; Gaas nanowires; High gain; Metal semiconductor metal; Photoconductive gains; Schottky diodes; Spectral response; Nanowires; Photodetectors; Photons; Schottky barrier diodes; Semiconducting gallium; Gallium arsenide
dc.titleHigh gain single GaAs nanowire photodetector
dc.typeJournal article
local.bibliographicCitation.issue9en_AU
local.bibliographicCitation.startpage093101en_AU
local.contributor.affiliationWang, Hao, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidu4953384en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor090000en_AU
local.identifier.ariespublicationU3488905xPUB880en_AU
local.identifier.citationvolume103en_AU
local.identifier.doi10.1063/1.4816246en_AU
local.identifier.scopusID2-s2.0-84884185116
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

Downloads

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
01_Wang_High_gain_single_GaAs_nanowire_2013.pdf
Size:
1.27 MB
Format:
Adobe Portable Document Format
Description:
Published Version
Download

License bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
884 B
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

ANU Research Publications

DSpace software copyright © 2002-2026 LYRASIS

abcd