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Vertical Integration of Dual Wavelength Index Guided GaAs-Lasers

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Date

1999

Authors

Karouta, F
Jagadish, Chennupati
van Roy, B
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

The vertical integration of two GaAs-based lasers operating at different wavelengths has been achieved with the use of re-growth technology. A V-channel substrate inner stripe structure was used for the bottom laser and a ridge waveguide for the top laser. Both lasers shared a common electrode and can be powered independently or simultaneously. This represents a promising method for fabricating integrated lasers with different wavelengths.

Description

Keywords

Keywords: Semiconducting gallium arsenide; Semiconductor device structures; Semiconductor growth; Waveguides; Index guided lasers; Semiconductor lasers

Citation

URI

http://hdl.handle.net/1885/93693

Collections

ANU Research Publications

Source

Electronics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1049/el:19990554

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