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Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

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dc.contributor.authorCapiod, P.
dc.contributor.authorXu, T.
dc.contributor.authorNys, J. P.
dc.contributor.authorBerthe, M.
dc.contributor.authorPatriarche, G.
dc.contributor.authorLymperakis, L.
dc.contributor.authorNeugebauer, J.
dc.contributor.authorCaroff, P.
dc.contributor.authorDunin-Borkowski, R. E.
dc.contributor.authorEbert, Ph.
dc.contributor.authorGrandidier, B.
dc.date.accessioned2015-09-22T06:30:42Z
dc.date.available2015-09-22T06:30:42Z
dc.date.issued2013-09-18
dc.date.updated2016-02-24T09:24:51Z
dc.description.abstractThe band structure and the Fermi level pinning at clean and well-ordered sidewall surfaces of zincblende (ZB)-wurtzite (WZ) GaAs nanowires are investigated by scanning tunneling spectroscopy and density functional theory calculations. The WZ-ZB phase transition in GaAs nanowires introduces p-i junctions at the sidewall surfaces. This is caused by the presence of numerous steps, which induce a Fermi level pinning at different energies on the non-polar WZ and ZB sidewall facets.
dc.description.sponsorshipThis study was financially supported by the EQUIPEX program Excelsior, the European Community’s Seventh Framework Program (Grant No. PITN-GA-2012- 316751, “Nanoembrace” Project) and the Impuls- und Vernetzungsfonds of the Helmholtz-Gemeinschaft Deutscher Forschungszentren under Grant No. HIRG-0014. T. Xu acknowledges the support from the National Natural Science Foundation of China (Grant No. 61204014).en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15647
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 22/09/15). Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Capiod, P., et al. "Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces." Applied Physics Letters 103.12 (2013): 122104.) and may be found at https://doi.org/10.1063/1.4821293
dc.sourceApplied Physics Letters
dc.subjectKeywords: Band offsets; Fermi level pinning; Gaas nanowires; Non-polar; Scanning tunneling spectroscopy; Wurtzites; Zinc-blende; Fermi level; Gallium arsenide; Nanowires; Scanning tunneling microscopy; Semiconducting gallium; Zinc sulfide
dc.titleBand offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces
dc.typeJournal article
local.bibliographicCitation.issue12en_AU
local.bibliographicCitation.startpage122104en_AU
local.contributor.affiliationCapiod, P., UMR National Center for Scientific Research, Franceen_AU
local.contributor.affiliationXu, T., UMR National Center for Scientific Research, Franceen_AU
local.contributor.affiliationNys, J.P., UMR National Center for Scientific Research, Franceen_AU
local.contributor.affiliationBerthe, M., UMR National Center for Scientific Research, Franceen_AU
local.contributor.affiliationPatriarche, G., Centre National de la Recherche Scientifique (National Center for Scientific Res, Franceen_AU
local.contributor.affiliationLymperakis, L., Max-Planck Institut fur Eisenforschung, Germanyen_AU
local.contributor.affiliationNeugebauer, J., Max-Planck Institut fur Eisenforschung, Germanyen_AU
local.contributor.affiliationCaroff, Philippe, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationDunin-Borkowski, R.E., Peter Grunberg Institut, Germanyen_AU
local.contributor.affiliationEbert, Ph, Peter Grunberg Institut, Germanyen_AU
local.contributor.affiliationGrandidier, B., UMR National Center for Scientific Research, Franceen_AU
local.contributor.authoruidu5309137en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020406en_AU
local.identifier.absfor100705en_AU
local.identifier.absfor100706en_AU
local.identifier.absseo970102en_AU
local.identifier.absseo970109en_AU
local.identifier.ariespublicationf5625xPUB4386en_AU
local.identifier.citationvolume103en_AU
local.identifier.doi10.1063/1.4821293en_AU
local.identifier.scopusID2-s2.0-84884896987
local.identifier.thomsonID000324826000032
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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