Two-color InGaAs/GaAs quantum dot infrared photodetectors by selective area interdiffusion

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Authors

Fu, Lan
Li, Qing
Kuffner, P
Jolley, Greg
Gareso, Paulus
Jagadish, Chennupati
Tan, Hark Hoe

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American Institute of Physics (AIP)

Abstract

We report the postgrowth fabrication of two-color InGaAsGaAs quantum dot infrared photodetectors (QDIPs). By capping half of the as-grown QDIP structure with titanium dioxide (Ti O2) and performing rapid thermal annealing under the optimized condition, a

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Applied Physics Letters

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