Implant Isolation of AlGaAs Multilayer DBR

Date

2004

Authors

Coelho, A V P
Boudinov, H
Lippen, T V
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

AlGaAs distributed Bragg reflector (DBR) structures isolation by proton irradiation was studied. The evolution of n- and p-type DBR structures lateral sheet resistance with the irradiated proton dose was measured. The vertical isolation behavior was also

Description

Keywords

Keywords: Carrier concentration; Carrier mobility; Electric resistance; Lasers; Proton irradiation; Semiconducting aluminum compounds; Thermodynamic stability; Distributed Bragg reflectors (DBR); Implant isolation; Lateral sheet resistance; Vertical cavity surface AlGaAs; DBR; Implantation; Isolation; VCSEL

Citation

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

Book Title

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