Implant Isolation of AlGaAs Multilayer DBR
Date
2004
Authors
Coelho, A V P
Boudinov, H
Lippen, T V
Jagadish, Chennupati
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
AlGaAs distributed Bragg reflector (DBR) structures isolation by proton irradiation was studied. The evolution of n- and p-type DBR structures lateral sheet resistance with the irradiated proton dose was measured. The vertical isolation behavior was also
Description
Keywords
Keywords: Carrier concentration; Carrier mobility; Electric resistance; Lasers; Proton irradiation; Semiconducting aluminum compounds; Thermodynamic stability; Distributed Bragg reflectors (DBR); Implant isolation; Lateral sheet resistance; Vertical cavity surface AlGaAs; DBR; Implantation; Isolation; VCSEL
Citation
Collections
Source
Nuclear Instruments and Methods in Physics Research: Section B
Type
Journal article