High power junction transistor [Power transistor]

Abstract

807,582. Transistors. CLEVITE CORPORATION. Dec. 15, 1955 [Dec. 27, 1954], No. 36012/55. Class 37. A semi-conductor device comprises an emitter electrode in strip form contacting a surface of the semi-conductor body, an ohmic base electrode in contact with the same surface parallel to and on opposite sides of the emitter, and a collector electrode. Fig. 1 shows a germanium body 10 having an alloy junction emitter electrode 11 lying between ohmic base electrodes 14 and 15 which are connected together externally, and alloy junction collector electrode 17 on the opposite surface and which is wide enough to cover the area enclosed by the base electrode. The collector may be soldered to a copper plate for external connections. Modifications are described in which the emitter and base electrodes are shaped like closed rectangles or annular rings surrounding a central circular electrode, or in the form of interlocking combs. If desired, two emitters lying between three sections of the base electrode may be provided.