Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Temperature Dependence of Threshold Switching in NbOx Thin Films

Thumbnail Image

Date

2014

Authors

Li, Shuai
Liu, Xinjun
Nandi, Sanjoy
Venkatachalam, Dinesh
Elliman, Robert

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

The threshold switching characteristics of amorphous NbO<inf>x</inf> thin films is investigated with particular emphasis on temperature dependence of the switching characteristics. Threshold switching in this material is believed to result from a thermally-induced insulator-metal-transition (IMT) induced along a filamentary path by local Joule heating. Increasing the operating temperature is shown to lead to a reduction in the resistance of the high-resistance state and to a reduction in the threshold switching voltage. These results are discussed in relation to the transport properties of NbO<inf>x</inf> and the IMT switching model.

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/61541

Collections

ANU Research Publications

Source

COMMAD 2014

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2014.7038673

Restricted until

2037-12-31

Downloads

File
Description
01_Li_Temperature_Dependence_of_2014.pdf (250.79 KB)

DSpace software copyright © 2002-2026 LYRASIS