Substrate engineering for Ni-assisted growth of carbon nano-tubes

dc.contributor.authorKolahdouz, z.
dc.contributor.authorKolahdouz, M.
dc.contributor.authorGhanbari, H.
dc.contributor.authorMohajerzadeh, Seyyed Shamsodin
dc.contributor.authorNaureen, Shagufta
dc.contributor.authorRadamson, H.H.
dc.date.accessioned2015-12-10T23:18:54Z
dc.date.issued2012
dc.date.updated2016-02-24T09:57:39Z
dc.description.abstractThe growth of carbon multi-walled nano-tubes (MWCNTs) using metal catalyst (e.g. Ni, Co, and Fe) has been extensively investigated during the last decade. In general, the physical properties of CNTs depend on the type, quality and diameter of the tubes. One of the parameters which affects the diameter of a MWCNT is the size of the catalyst metal islands. Considering Ni as the metal catalyst, the formed silicide layer agglomerates (island formation) after a thermal treatment. One way to decrease the size of Ni islands is to apply SiGe as the base for the growth. In this study, different methods based on substrate engineering are proposed to change/control the MWCNT diameters. These include (i) well-controlled oxide openings containing Ni to miniaturize the metal island size, and (ii) growth on strained or partially relaxed SiGe layers for smaller Ni silicide islands.
dc.identifier.issn0921-5107
dc.identifier.urihttp://hdl.handle.net/1885/65826
dc.publisherElsevier
dc.sourceMaterials Science and Engineering B
dc.subjectKeywords: Colloidal lithography; Island formation; Metal catalyst; Metal islands; Multi-walled; Ni silicide; Relaxed SiGe; SiGe; Silicide layers; Substrate engineering; Catalysts; Nickel compounds; Plasma enhanced chemical vapor deposition; Silicides; Silicon alloy Carbon nano-tube; Hole colloidal lithography; Metal catalyst growth; PECVD; SiGe
dc.titleSubstrate engineering for Ni-assisted growth of carbon nano-tubes
dc.typeJournal article
local.bibliographicCitation.issue17
local.bibliographicCitation.lastpage1546
local.bibliographicCitation.startpage1542
local.contributor.affiliationKolahdouz, z., University of Tehran
local.contributor.affiliationKolahdouz, M., University of Tehran
local.contributor.affiliationGhanbari, H., Tarbiat Modarres University,
local.contributor.affiliationMohajerzadeh, Seyyed Shamsodin, University of Tehran, Thin Film Lab
local.contributor.affiliationNaureen, Shagufta, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRadamson, H.H., KTH Royal Institute of Technology
local.contributor.authoruidNaureen, Shagufta, u5447495
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationU3488905xPUB1166
local.identifier.citationvolume177
local.identifier.doi10.1016/j.mseb.2012.01.021
local.identifier.scopusID2-s2.0-84866344927
local.type.statusPublished Version

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