Structural characterization of Ge nanocrystals in silica amorphised by ion irradiation
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Araujo, Leandro
Giulian, Raquel
Johannessen, Bernt
Llewellyn, David
Kluth, Patrick
Azevedo, G de M
Cookson, D J
Ridgway, Mark C
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Elsevier
Abstract
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 MeV Si ions over a different fluence range (2 × 1011-2 × 1013 cm-2) than previously reported. Size and depth distributions as well as structural disorder
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Nuclear Instruments and Methods in Physics Research: Section A
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2037-12-31