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In-Plane Isotropic/Anisotropic 2D van der Waals Heterostructures for Future Devices

dc.contributor.authorNeupane, Guru
dc.contributor.authorLu, Yuerui
dc.contributor.authorZhou, Kai
dc.contributor.authorChen, Songsong
dc.contributor.authorYildirim, Tanju
dc.contributor.authorZhang, Peixin
dc.date.accessioned2024-05-08T05:15:47Z
dc.date.issued2019
dc.date.updated2023-01-08T07:17:28Z
dc.description.abstractMono‐ to few‐layers of 2D semiconducting materials have uniquely inherent optical, electronic, and magnetic properties that make them ideal for probing fundamental scientific phenomena up to the 2D quantum limit and exploring their emerging technological applications. This Review focuses on the fundamental optoelectronic studies and potential applications of in‐plane isotropic/anisotropic 2D semiconducting heterostructures. Strong light–matter interaction, reduced dimensionality, and dielectric screening in mono‐ to few‐layers of 2D semiconducting materials result in strong many‐body interactions, leading to the formation of robust quasiparticles such as excitons, trions, and biexcitons. An in‐plane isotropic nature leads to the quasi‐2D particles, whereas, an anisotropic nature leads to quasi‐1D particles. Hence, in‐plane isotropic/anisotropic 2D heterostructures lead to the formation of quasi‐1D/2D particle systems allowing for the manipulation of high binding energy quasi‐1D particle populations for use in a wide variety of applications. This Review emphasizes an exciting 1D–2D particles dynamic in such heterostructures and their potential for high‐performance photoemitters and exciton–polariton lasers. Moreover, their scopes are also broadened in thermoelectricity, piezoelectricity, photostriction, energy storage, hydrogen evolution reactions, and chemical sensor fields. The unique in‐plane isotropic/anisotropic 2D heterostructures may open the possibility of engineering smart devices in the nanodomain with complex opto‐electromechanical functions.en_AU
dc.description.sponsorshipThe authors acknowledge the financial support from National Science Foundation China (No.61775147).en_AU
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.issn1613-6810en_AU
dc.identifier.urihttp://hdl.handle.net/1885/317362
dc.language.isoen_AUen_AU
dc.publisherWiley-VCH Verlag GMBHen_AU
dc.rights© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_AU
dc.sourceSmallen_AU
dc.subject2D heterostructuresen_AU
dc.subjectisotropic/anisotropicen_AU
dc.subjectnano-devicesen_AU
dc.subjectquasi-1D/2D particlesen_AU
dc.subjectsemiconductorsen_AU
dc.titleIn-Plane Isotropic/Anisotropic 2D van der Waals Heterostructures for Future Devicesen_AU
dc.typeJournal articleen_AU
local.bibliographicCitation.issue11en_AU
local.bibliographicCitation.lastpage16en_AU
local.bibliographicCitation.startpage1en_AU
local.contributor.affiliationNeupane, Guru, College of Engineering, Computing and Cybernetics, ANUen_AU
local.contributor.affiliationLu, Yuerui, College of Engineering, Computing and Cybernetics, ANUen_AU
local.contributor.affiliationZhou, Kai, Shenzhen Universityen_AU
local.contributor.affiliationChen, Songsong, Shenzhen Universityen_AU
local.contributor.affiliationYildirim, Tanju, Shenzhen Universityen_AU
local.contributor.affiliationZhang, Peixin, Shenzhen Universityen_AU
local.contributor.authoruidNeupane, Guru, u1052479en_AU
local.contributor.authoruidLu, Yuerui, u5342720en_AU
local.description.embargo2099-12-31
local.description.notesImported from ARIESen_AU
local.identifier.absfor400900 - Electronics, sensors and digital hardwareen_AU
local.identifier.absfor401600 - Materials engineeringen_AU
local.identifier.ariespublicationu3102795xPUB970en_AU
local.identifier.citationvolume15en_AU
local.identifier.doi10.1002/smll.201804733en_AU
local.identifier.scopusID2-s2.0-85061058740
local.identifier.thomsonIDWOS:000463290700006
local.publisher.urlhttps://www.wiley.com/en-gben_AU
local.type.statusPublished Versionen_AU

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