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Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field

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Date

2010

Authors

Hall, C. R.
Dao, Lap Van
Koike, K.
Sasa, S.
Inoue, M.
Yano, M.
Jagadish, C.
Davis, J. A.
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Quantum wells with graded barriers are demonstrated as a means to control both the transition energy and electron-hole wave function overlap for quantum wells with an intrinsic internal electric field. In the case of c-axis grown ZnO/ZnMgO quantum wells, the graded barriers are produced by stepping the magnesium composition during the growth process. Four quantum wells with different structures are examined, where each well has similar transition energy, yet a wide range of wave function overlaps are observed. Photoluminescence and time resolved photoluminescence show good agreement with calculations.

Description

Keywords

Keywords: Different structure; Electron hole; Growth process; Internal electric fields; Quantum well; Time-resolved photoluminescence; Transition energy; ZnO/ZnMgO; Electric fields; Magnesium; Optical properties; Photoluminescence; Wave functions; Zinc; Semiconduct

Citation

URI

http://hdl.handle.net/1885/15543

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.3428430

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