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Base doping and recombination activity of impurities in crystalline silicon solar cellts

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dc.contributor.authorGeerligs, Lambert Johan
dc.contributor.authorMacDonald, Daniel
dc.date.accessioned2015-12-13T23:07:46Z
dc.date.issued2004
dc.date.updated2015-12-12T08:10:40Z
dc.description.abstractThe optimisation of base doping for industrial crystalline silicon solar cells is examined with model calculations. Focus is on the relation between base doping and carrier recombination through the important impurities interstitial iron (Fei) and the metastable boron-oxygen (BO) complex. In p-type silicon, the optimum base resistivity is strongly dependent on defect concentration. In n-type silicon, recombination due to Fei is much lower and nearly independent of resistivity. Fei is likely representative for other transition metal impurities. In many real cells a balance between Fei or similar defects, and BO will occur.
dc.identifier.issn1062-7995
dc.identifier.urihttp://hdl.handle.net/1885/86350
dc.publisherJohn Wiley & Sons Inc
dc.sourceProgress in Photovoltaics: Research and Applications
dc.subjectKeywords: Crystal impurities; Crystalline materials; Doping (additives); Electric conductivity; Iron; Mathematical models; Optimization; Silicon; Back-surface fields (BSF); Base; Recombination; Solar cells Base; Doping; Recombination; Resistivity; Silicon
dc.titleBase doping and recombination activity of impurities in crystalline silicon solar cellts
dc.typeJournal article
local.bibliographicCitation.issue4
local.bibliographicCitation.lastpage315
local.bibliographicCitation.startpage309
local.contributor.affiliationGeerligs, Lambert Johan, Energy Research Centre of the Netherlands
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.authoruidMacDonald, Daniel, u9718154
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub15204
local.identifier.citationvolume12
local.identifier.doi10.1002/pip.546
local.identifier.scopusID2-s2.0-2942621025
local.type.statusPublished Version

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