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Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers

Date

Authors

Rougieux, Fiacre

Grant, Nicholas

MacDonald, Daniel

Publisher

Wiley-VCH Verlag GMBH

Abstract

In this study, we uncover a recombination-active grown-in defect reducing the minority carrier lifetime of Czochralski grown n-type silicon from 5 ms to below 2 ms. We also demonstrate that the defect can be de-activated by annealing between 300 °C and 3

Keywords

Keywords: Czochralski silicon wafers; Ingot growth; Minority carrier lifetimes; N type silicon; Thermal deactivation; Annealing; Carrier lifetime; Defects; Point defects; Silicon; Silicon wafers Annealing; Carrier lifetime; Point defects; Silicon

URI

http://hdl.handle.net/1885/74808

Collections

ANU Research Publications

Source

Physica Status Solidi: Rapid Research Letters

Type

Journal article

DOI

10.1002/pssr.201308053

Restricted until

2037-12-31

Downloads

File

Description

01_Rougieux_Thermal_deactivation_of_2013.pdf (379.04 KB)