Deformation behavior of ion-beam-modified GaN

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dc.contributor.authorKucheyev, S. O.
dc.contributor.authorBradby, J. E.
dc.contributor.authorWilliams, J. S.
dc.contributor.authorJagadish, C.
dc.contributor.authorSwain, M. V.
dc.contributor.authorLi, G.
dc.date.accessioned2015-10-12T04:53:40Z
dc.date.available2015-10-12T04:53:40Z
dc.date.issued2001-01-08
dc.date.updated2015-12-10T11:10:29Z
dc.description.abstractThe deformation behavior of wurtzite GaN films modified by ion bombardment is studied by nanoindentation with a spherical indenter. Results show that implantation disorder significantly changes the mechanical properties of GaN. In particular, GaN amorphized by ion bombardment exhibits plastic deformation even for very low loads with dramatically reduced values of hardness and Young’s modulus compared to the values of as-grown GaN. Implantation-produced defects in crystalline GaN suppress the plastic component of deformation and significantly change the values of hardness and Young’s modulus. In addition, implantation disorder in crystalline GaN suppresses both “pop-in” events during loading and the appearance of slip traces on the sample surface as a result of indentation. This strongly suggests that slip nucleation (rather than a phase transformation) is the physical mechanism responsible for the pop-in events observed during loading of as-grown crystalline GaN.
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15882
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 12/10/15). Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1335552
dc.sourceApplied Physics Letters
dc.titleDeformation behavior of ion-beam-modified GaN
dc.typeJournal article
local.bibliographicCitation.issue2en_AU
local.bibliographicCitation.lastpage158en_AU
local.bibliographicCitation.startpage156en_AU
local.contributor.affiliationKucheyev, Sergei, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationSwain, Michael Vincent, University of Sydney, Australiaen_AU
local.contributor.affiliationLi, Gang, ShenZhen Fangda GuoKe Optronics Technical Co Ltd, Chinaen_AU
local.contributor.authoremailsergei.kucheyev@anu.edu.auen_AU
local.contributor.authoruidu9910365en_AU
local.description.notesImported from ARIESen_AU
local.description.refereedYes
local.identifier.absfor020204en_AU
local.identifier.ariespublicationMigratedxPub1704en_AU
local.identifier.citationvolume78en_AU
local.identifier.doi10.1063/1.1335552en_AU
local.identifier.scopusID2-s2.0-0000224157
local.identifier.uidSubmittedByu3488905en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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