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Material combination of Tunnel-SiO2 with a (sub-)Monolayer of ALD-AlOx on silicon offering a highly passivating hole selective contact

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dc.contributor.authorHiller, Daniel
dc.contributor.authorHonicke, Philipp
dc.contributor.authorKoenig, Dirk
dc.date.accessioned2024-04-29T22:33:52Z
dc.date.issued2020
dc.date.updated2023-01-08T07:16:19Z
dc.description.abstractIn this work, we investigate a passivating hole-selective tunnel contact on crystalline silicon (Si) based on an ultrathin thermal SiO2 and a (sub-)monolayer thick aluminum oxide (AlOx) deposited by atomic layer deposition (ALD) with 1 to 7 cycles. Rapid thermal annealing (RTA) is essential to activate the passivation and intense visible light is demonstrated to play a key role in the formation and occupation of the Al-induced acceptor states in SiO2 that provide the passivation. This simple stack provides very good surface passivation on n-type Si with a surface saturation current density as low as J0s = 25 fA/cm2 (Seff = 2.7 cm/s) and a contact resistivity of ~200 mOmega cm2, while being Si-dopant-free, fully transparent and firing-stable. The Al-deposition on thermal SiO2 during the initial ALD-cycles is studied carefully by synchrotron-based reference-free grazing incidence X-ray fluorescence spectrometry (GIXRF). Different metallization and capping approaches are tested and discussed.en_AU
dc.description.sponsorshipD.H. thanks the Alexander von Humboldt Foundation for a Feodor Lynen Fellowship and acknowledges funding by the Australian Centre for Advanced Photovoltaics (ACAP, Collaboration Grant). D.H. also appreciates discussions with Andrew Blakers and Kean Chern Fong (ANU). James Cotsell (ANU) is gratefully acknowledged for technical support with the ALD-system. In this study ellipsometer facilities at the ACT Node of the Australian National Fabrication Facility (ANFF) were used. The GIXRF experiments were performed within the EMPIR project HyMet. The financial support of the EMPIR program is gratefully acknowledged. It is jointly funded by the European Metrology Programme for Innovation and Research (EMPIR) and participating countries within the European Association of National Metrology Institutes (EURAMET) and the European Union. D. K. would like to thank RWTH Aachen University, Germany, for the 2018 Theodore von Kàrmàn Fellowship.en_AU
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.issn0927-0248en_AU
dc.identifier.urihttp://hdl.handle.net/1885/317145
dc.language.isoen_AUen_AU
dc.publisherElsevieren_AU
dc.rights© 2020 The authorsen_AU
dc.sourceSolar Energy Materials and Solar Cellsen_AU
dc.subjectHole-selective contacten_AU
dc.subjectSilicon surface passivationen_AU
dc.subjectAtomic layer depositionen_AU
dc.subjectAluminum oxideen_AU
dc.subjectMonolayeren_AU
dc.subjectGrazing incidence X-ray fluorescence spectrometryen_AU
dc.titleMaterial combination of Tunnel-SiO2 with a (sub-)Monolayer of ALD-AlOx on silicon offering a highly passivating hole selective contacten_AU
dc.typeJournal articleen_AU
local.bibliographicCitation.lastpage8en_AU
local.bibliographicCitation.startpage1en_AU
local.contributor.affiliationHiller, Daniel, College of Engineering, Computing and Cybernetics, ANUen_AU
local.contributor.affiliationHonicke, Philipp, Physikalisch-Technische Bundesanstalt (PTB)en_AU
local.contributor.affiliationKoenig, Dirk, College of Science, ANUen_AU
local.contributor.authoruidHiller, Daniel, u1049396en_AU
local.contributor.authoruidKoenig, Dirk, u1083435en_AU
local.description.embargo2099-12-31
local.description.notesImported from ARIESen_AU
local.identifier.absfor401600 - Materials engineeringen_AU
local.identifier.ariespublicationa383154xPUB15250en_AU
local.identifier.citationvolume215en_AU
local.identifier.doi10.1016/j.solmat.2020.110654en_AU
local.identifier.scopusID2-s2.0-85086564454
local.identifier.thomsonIDWOS:000574946800013
local.publisher.urlhttps://www.sciencedirect.com/en_AU
local.type.statusPublished Versionen_AU

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