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Improvement of Minority Carrier Lifetime in GaAs/Al x Gal 1-x As Core-Shell Nanowires

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Date

2012

Authors

Jiang, Nian
Parkinson, Patrick
Gao, Qiang
Wong-Leung, Jennifer
Breuer, Steffan
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-catalysed GaAs cores. Cross-section transmission electron microscope bright field images show that the tapering at bottom of the nanowires is mainly caused by GaAs cap growth. Time-resolved photo-luminescence measurements of single nanowires were taken at room temperature and a minority carrier lifetime of (1.02±0.43) ns was obtained for single nanowires with AlxGa1-xAs shell grown at 750°C. A close correlation between the shell growth temperature and minority carrier lifetime has also been observed.

Description

Keywords

Keywords: Bright-field images; Core-shell nanowires; Cross-section transmission; Metal organic chemical vapour depositions; Minority carrier lifetimes; Photoluminescence measurements; Room temperature; Single nanowires; Carrier lifetime; Gallium arsenide; Metallorg

Citation

URI

http://hdl.handle.net/1885/59738

Collections

ANU Research Publications

Source

COMMAD 2012 Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2012.6472346

Restricted until

2037-12-31

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Description
01_Jiang_Improvement_of_Minority_2012.pdf (362.67 KB)

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