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Oxidation-Induced Inversion Layer in Compensated P-Type Silicon

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dc.contributor.authorRougieux, Fiacre
dc.contributor.authorMacDonald, Daniel
dc.contributor.authorMcIntosh, Keith
dc.contributor.authorCuevas, Andres
dc.coverage.spatialHamburg Germany
dc.date.accessioned2015-12-07T22:47:55Z
dc.date.createdSeptember 21-24 2009
dc.date.issued2009
dc.date.updated2015-12-07T11:55:20Z
dc.identifier.isbn3936338256
dc.identifier.urihttp://hdl.handle.net/1885/26258
dc.publisherWIP-Renewable Energies
dc.relation.ispartofseriesEuropean Photovoltaic Solar Energy Conference 2009
dc.sourceProceedings of the 24th European Photovoltaic Solar Energy Conference
dc.titleOxidation-Induced Inversion Layer in Compensated P-Type Silicon
dc.typeConference paper
local.bibliographicCitation.lastpage1089
local.bibliographicCitation.startpage1086
local.contributor.affiliationRougieux, Fiacre, College of Engineering and Computer Science, ANU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.affiliationMcIntosh, Keith, College of Engineering and Computer Science, ANU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.contributor.authoruidRougieux, Fiacre, u4611760
local.contributor.authoruidMacDonald, Daniel, u9718154
local.contributor.authoruidMcIntosh, Keith, u4249405
local.contributor.authoruidCuevas, Andres, u9308750
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.ariespublicationu4708487xPUB43
local.type.statusPublished Version

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