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Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching

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dc.contributor.authorNandi, Sanjoy
dc.contributor.authorDas, Sujan Kumar
dc.contributor.authorCui, Yubo
dc.contributor.authorEl Helou, Assaad
dc.contributor.authorNATH, SHIMUL KANTI
dc.contributor.authorRatcliff, Tom
dc.contributor.authorRaad, Peter E.
dc.contributor.authorElliman, Rob
dc.date.accessioned2024-03-28T00:24:18Z
dc.date.issued2022
dc.date.updated2022-11-13T07:18:08Z
dc.description.abstractMetal-oxide-metal (MOM) devices based on niobium oxide exhibit threshold switching (or current-controlled negative differential resistance) due to thermally induced conductivity changes produced by Joule heating. A detailed understanding of the device characteristics therefore relies on an understanding of the thermal properties of the niobium oxide film and the MOM device structure. In this study, we use time-domain thermoreflectance to determine the thermal conductivity of amorphous NbOx films as a function of film composition and temperature. The thermal conductivity is shown to vary between 0.86 and 1.25 W·m-1·K-1 over the composition (x = 1.9 to 2.5) and temperature (293 to 453 K) ranges examined, and to increase with temperature for all compositions. The impact of these thermal conductivity variations on the quasistatic current-voltage (I-V) characteristics and oscillator dynamics of MOM devices is then investigated using a lumped-element circuit model. Understanding such effects is essential for engineering functional devices for nonvolatile memory and brain-inspired computing applications.en_AU
dc.description.sponsorshipThis work was partly funded by the Australian ResearchCouncil (ARC) and Varian Semiconductor Equipment/Applied Materials through an ARC Linkage Project Grant:LP150100693. We would like to acknowledge access toNCRIS facilities at the ACT node of the Australian NationalFabrication Facility (ANFF) and the Australian Facility forAdvanced ion-implantation Research (AFAiiR), a node of theHeavy-Ion Accelerator Capability. Shimul Kanti Nath acknowl-edges the support of the Forrest Prospect Fellowship awardedby the Forrest Research Foundation, Australia. We alsoacknowledge the facilities and the scientific and technicalassistance of the Australian Microscopy & MicroanalysisResearch Facility at the Centre of Advanced Microscopy,The Australian National Universityen_AU
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.issn1944-8244en_AU
dc.identifier.urihttp://hdl.handle.net/1885/316382
dc.language.isoen_AUen_AU
dc.provenancehttps://v2.sherpa.ac.uk/id/publication/7761..."The Accepted Version can be archived in a Non-Commercial Institutional Repository. 12 months embargo" from SHERPA/RoMEO site (as at 3/04/2024).
dc.publisherAmerican Chemical Societyen_AU
dc.relationhttp://purl.org/au-research/grants/arc/LP150100693en_AU
dc.rights© 2022 American Chemical Societyen_AU
dc.sourceACS Applied Materials and Interfacesen_AU
dc.subjectthermal conductivityen_AU
dc.subjectmemristoren_AU
dc.subjectelectroformingen_AU
dc.subjectvolatile memoryen_AU
dc.subjectnegative differential resistanceen_AU
dc.subjectniobium oxideen_AU
dc.titleThermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switchingen_AU
dc.typeJournal articleen_AU
dcterms.accessRightsOpen Access
local.bibliographicCitation.issue18en_AU
local.bibliographicCitation.lastpage21277en_AU
local.bibliographicCitation.startpage21270en_AU
local.contributor.affiliationNandi, Sanjoy, College of Science, ANUen_AU
local.contributor.affiliationDas, Sujan, College of Science, ANUen_AU
local.contributor.affiliationCui, Yubo, Southern Methodist Universityen_AU
local.contributor.affiliationEl Helou, Assaad, Department of Mechanical Engineering, Southern Methodist Universityen_AU
local.contributor.affiliationNath, Shimul, College of Science, ANUen_AU
local.contributor.affiliationRatcliff, Tom, College of Science, ANUen_AU
local.contributor.affiliationRaad, Peter E., Southern Methodist Universityen_AU
local.contributor.affiliationElliman, Rob, College of Science, ANUen_AU
local.contributor.authoruidNandi, Sanjoy, u4939839en_AU
local.contributor.authoruidDas, Sujan, u7069089en_AU
local.contributor.authoruidNath, Shimul, u5482854en_AU
local.contributor.authoruidRatcliff, Tom, u4311306en_AU
local.contributor.authoruidElliman, Rob, u9012877en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor401600 - Materials engineeringen_AU
local.identifier.ariespublicationa383154xPUB34219en_AU
local.identifier.citationvolume14en_AU
local.identifier.doi10.1021/acsami.2c04618en_AU
local.identifier.scopusID2-s2.0-85130045536
local.publisher.urlhttps://pubs.acs.org/en_AU
local.type.statusPublished Versionen_AU

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