Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence

Abstract

We present an approach to characterize the relative saturation current density (J oe) and sheet resistance (RSH) of laser doped regions on silicon wafers based on rapid photoluminescence (PL) imaging. In the absence of surface passivation layers, the RSH of laser doped regions using a wide range of laser parameters is found to be inversely proportional to the PL intensity (I PL ). We explain the underlying mechanism for this correlation, which reveals that, in principle, I PL is inversely proportional to J oe at any injection level. The validity of this relationship under a wide range of typical experimental conditions is confirmed by numerical simulations. This method allows the optimal laser parameters for achieving low RSH and J oe to be determined from a simple PL image. Show more