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Trapping of minority carriers in mulicrystalline silicon

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Date

1999

Authors

MacDonald, Daniel
Cuevas, Andres

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Photoconductance measurements have shown anomalously high effective carrier lifetimes on cast multicrystalline silicon wafers. This anomaly is demonstrated as the result of minority carrier trapping, and is explained both quantitatively and qualitatively

Description

Keywords

Keywords: Charge carriers; Dislocations (crystals); Electron traps; Hole traps; Photoconductivity; Polycrystalline materials; Carrier lifetime; Carrier trapping; Multicrystalline silicon; Silicon wafers

Citation

URI

http://hdl.handle.net/1885/91602

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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Description
01_MacDonald_Trapping_of_minority_carriers_1999.pdf (437.71 KB)

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