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Growth and properties of III-V compound semiconductor heterostructure nanowires

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Date

2011

Authors

Gao, Qiang
Jackson, Howard E
Smith, Leigh M
Yarrison-Rice, Jan M
Zou, Jin
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Physics Publishing

Abstract

We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1)B GaAs substrates by metal organic chemical vapor deposition via vapor-liquid-solid mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, non-radiative surface and bulk defects, carrier lifetime and strain effects on the bandgap energy.

Description

Keywords

Keywords: Band gap energy; Bulk defects; GaAs; GaAs substrates; Heterostructures; III-V compound semiconductor; Metalorganic chemical vapor deposition; Micro Raman Spectroscopy; Nanowire heterostructures; Non-radiative; Strain effect; Time-resolved photoluminescenc

Citation

URI

http://hdl.handle.net/1885/66574

Collections

ANU Research Publications

Source

Semiconductor Science and Technology

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1088/0268-1242/26/1/014035

Restricted until

2037-12-31

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01_Gao_Growth_and_properties_of_III-V_2011.pdf (1.54 MB)

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