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Improved performance of InGaAs/GaAs Quantum Dot Solar Cells using Si-modulation doping

Date

Authors

Lu, Hao Feng

Fu, Lan

Jolley, Greg

Jagadish, Chennupati

Tan, Hark Hoe

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

N-type silicon modulation doping was introduced into the barrier layers of InGaAs/GaAs quantum dot solar cells (QDSC) at two different doping concentrations. An increased energy conversion efficiency of 8.91 % was obtained for the modulation doped device

Keywords

Keywords: Active structures; Barrier layers; Doping concentration; Electron population; Modulation doping; Modulation-doped devices; N type silicon; Quantum dot solar cells; Energy conversion; Microelectronics; Modulation; Semiconductor quantum dots; Solar cells; N

URI

http://hdl.handle.net/1885/60313

Collections

ANU Research Publications

Source

COMMAD 2012 Proceedings

Type

Conference paper

DOI

10.1109/COMMAD.2012.6472393

Restricted until

2037-12-31

Downloads

File

Description

01_Lu_Improved_performance_of_2012.pdf (249.67 KB)