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Accurate measurement of the formation rate of iron-boron pairs in silicon

Date

Authors

Tan, Jason

MacDonald, Daniel

Rougieux, Fiacre

Cuevas, Andres

Publisher

Institute of Physics Publishing

Abstract

This paper presents new data regarding the formation rate of iron-boron (Fei-B) pairs in p-type crystalline silicon. Improvements in the temperature control of the sample, a reduction in measurement error of the effective lifetime of the sample after all

Keywords

Keywords: Acceptor concentrations; Accurate measurement; Crystalline silicons; Effective lifetime; Formation rates; Iron-acceptor pairs; P-type; Statistical analysis; Time constants; Boron; Iron compounds; Semiconducting gallium compounds; Boron compounds

URI

http://hdl.handle.net/1885/68594

Collections

ANU Research Publications

Source

Semiconductor Science and Technology

Type

Journal article

DOI

10.1088/0268-1242/26/5/055019

Restricted until

2037-12-31

Downloads

File

Description

01_Tan_Accurate_measurement_of_the_2011.pdf (663.04 KB)