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Self-selective characteristics of nanoscale VOx devices for high-density ReRAM applications

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Date

2012

Authors

Son, Myungwoo
Liu, Xinjun
Sadaf, Sharif Md.
Lee, Daeseok
Park, Sangsu
Lee, Wootae
Kim, Seonghyun
Park, Jubong
Shin, Jungho
Jung, Seungjae

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

We herein present a hybrid-type memory device in which threshold switching and bipolar resistive switching are combined. The nanoscale vanadium oxide (VOx) device simultaneously exhibited self-selective performance and memory switching by electroforming.

Description

Keywords

Keywords: High-density; Memory performance; Memory switching; Nano scale; Nanoscale device; Resistive random access memory; Resistive switching; Retention properties; Selection property; Threshold switching; Vanadium oxides; Electroforming; Oxides; Platinum; Vanadi Resistive random access memory (ReRAM); Selection property; Vanadium oxide (VO x) nanoscale device

Citation

URI

http://hdl.handle.net/1885/65462

Collections

ANU Research Publications

Source

IEEE Electron Device Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/LED.2012.2188989

Restricted until

2037-12-31

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Description
01_Son_Self-selective_characteristics_2012.pdf (501.11 KB)

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