Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing

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Date

2010

Authors

McKerracher, Ian
Wong-Leung, Jennifer
Jolley, Greg
Fu, Lan
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

Quantum dot intermixing is a post-growth approach to tuning optoelectronic devices. SiO2 capping layers can enhance these effects through impurityfree vacancy disordering, whereas TiO2 caps can decrease intermixing. In this study, multi-colour quantum dot infrared photodetectors were fabricated through selective intermixing and four different encapsulants were investigated.

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Keywords

Keywords: Capping layer; Encapsulants; Impurity free vacancy disordering; InGaAs/GaAs; Quantum dot infrared photodetector; Quantum dot intermixing; Selective intermixing; Spectral tuning; TiO; Infrared detectors; Microelectronics; Mixing; Optoelectronic devices; Se

Citation

URI

http://hdl.handle.net/1885/52233

Collections

ANU Research Publications

Source

2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

Type

Conference paper

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DOI

10.1109/COMMAD.2010.5699773

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