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Evidence for vacancy-related recombination active defects in as-grown N-type czochralski silicon

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Date

2015

Authors

Zheng, Peiting
Rougieux, Fiacre
Grant, Nicholas
MacDonald, Daniel

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE Electron Devices Society

Abstract

A recombination of active defect in very high lifetime Czochralski grown n-type silicon wafers, which can be thermally deactivated at 150 °C, is described. In addition, the existence of a recently measured defect, which is deactivated at 350 °C, is conf

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Keywords

Citation

URI

http://hdl.handle.net/1885/55413

Collections

ANU Research Publications

Source

IEEE Journal of Photovoltaics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/JPHOTOV.2014.2366687

Restricted until

2037-12-31

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01_Zheng_Evidence_for_vacancy-related_2015.pdf (1.09 MB)

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