Effect of temperature and incident ion energy on nanostructure formation on silicon exposed to helium plasma

Abstract

Helium plasma can be used to deliver low‐energy (<100 eV) helium ions to stimulate the growth of nanostructures on silicon surfaces. This can produce a wide range of surface features including nanoscale roughening, nanowires and porous structures. In this study, nanostructure sizes varied from ∼10 to over 100 nm in diameter. The effect of these structures on surface reflectivity for photovoltaic and photocatalytic applications is also investigated. Broadband suppression of photoreflectivity is achieved across the 300-1,200 nm wavelength range studied for silicon exposed to helium plasma at 600°C, with an average reflectivity of 3.2% and 2.9% for incident helium ion energies of 42 and 62 eV, respectively. Show more