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Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

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dc.contributor.authorMacDonald, Daniel
dc.contributor.authorMackel, Helmut
dc.contributor.authorDoshi, Sachin
dc.contributor.authorBrendle, Willi
dc.contributor.authorCuevas, Andres
dc.contributor.authorWilliams, James
dc.contributor.authorConway, Martin
dc.date.accessioned2015-12-13T23:08:31Z
dc.date.available2015-12-13T23:08:31Z
dc.date.issued2003
dc.date.updated2015-12-12T08:14:08Z
dc.description.abstractThe deeply penetrating defects in self-ion implanted silicon was studied by using carrier lifetime measurements. The implant was found to result in two distinct regions of lifetime-reducing damage. The results showed that the annealing at higher temperatures reduced the severity of both the surface and the deeply propagated defects.
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/86742
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceApplied Physics Letters
dc.subjectKeywords: Annealing; Dislocations (crystals); Ion implantation; Transmission electron microscopy; Residual defects; Silicon
dc.titleCarrier lifetime studies of deeply penetrating defects in self-ion implanted silicon
dc.typeJournal article
local.bibliographicCitation.issue18
local.bibliographicCitation.lastpage2989
local.bibliographicCitation.startpage2987
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.affiliationMackel, Helmut, College of Engineering and Computer Science, ANU
local.contributor.affiliationDoshi, Sachin, College of Engineering and Computer Science, ANU
local.contributor.affiliationBrendle, Willi, College of Engineering and Computer Science, ANU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationConway, Martin, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidMacDonald, Daniel, u9718154
local.contributor.authoruidMackel, Helmut, u3333390
local.contributor.authoruidDoshi, Sachin, u3151469
local.contributor.authoruidBrendle, Willi, t219
local.contributor.authoruidCuevas, Andres, u9308750
local.contributor.authoruidWilliams, James, u8809701
local.contributor.authoruidConway, Martin, u9300106
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.absfor020404 - Electronic and Magnetic Properties of Condensed Matter; Superconductivity
local.identifier.ariespublicationMigratedxPub15701
local.identifier.citationvolume82
local.identifier.doi10.1063/1.1572469
local.identifier.scopusID2-s2.0-0038528468
local.type.statusPublished Version

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