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Ion Implantation into GaN

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dc.contributor.authorKucheyev, Sergei
dc.contributor.authorWilliams, James
dc.contributor.authorPearton, S J
dc.date.accessioned2015-12-10T23:31:03Z
dc.date.issued2001
dc.date.updated2015-12-10T11:11:18Z
dc.description.abstractThe current status of ion beam processing of GaN is reviewed. In particular, we discuss the following aspects of ion implantation into GaN: (i) damage build-up and amorphization, (ii) preferential surface disordering and loss of nitrogen during ion bombardment, (iii) ion-beam-induced porosity of amorphous GaN due to material dissociation, (iv) anomalous surface erosion during ion bombardment at elevated temperatures, (v) the effect of implantation disorder on mechanical properties, (vi) current progress on annealing of implantation disorder, (vii) electrical and optical doping, and (viii) electrical isolation. Emphasis is given to current problems which may hinder a successful application of ion implantation in the fabrication of GaN-based devices.
dc.identifier.issn0927-796X
dc.identifier.urihttp://hdl.handle.net/1885/68450
dc.publisherElsevier
dc.sourceMaterials Science and Engineering R-Reports
dc.subjectKeywords: Amorphization; Annealing; Dissociation; Erosion; Gallium nitride; Ion bombardment; Ion implantation; Surface treatment; Implantation disorder; Gallium compounds Annealing; GaN; Implantation disorder; Ion implantation
dc.titleIon Implantation into GaN
dc.typeJournal article
local.bibliographicCitation.lastpage107
local.bibliographicCitation.startpage51
local.contributor.affiliationKucheyev, Sergei, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationPearton, S J, University of Florida
local.contributor.authoruidKucheyev, Sergei, u9910365
local.contributor.authoruidWilliams, James, u8809701
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub1715
local.identifier.citationvolume33
local.identifier.doi10.1016/S0927-796X(01)00028-6
local.identifier.scopusID2-s2.0-0035874154
local.type.statusPublished Version

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